Spin dynamics in superconductor/ferromagnetic insulator hybrid structures with precessing magnetization

• Yaroslav V. Turkin and
• Nataliya Pugach

Beilstein J. Nanotechnol. 2023, 14, 233–239, doi:10.3762/bjnano.14.22

• ways of spin current injection into a superconductor, for example, the spin Hall effect [5], the spin Seebek effect [6], and ferromagnetic resonance spin pumping [7][8]. The spin pumping technique in hybrid structures consisting of a ferromagnetic insulator and a superconductor is considered to be the

The influence of structure and local structural defects on the magnetic properties of cobalt nanofilms

• Alexander Vakhrushev,
• Aleksey Fedotov,
• Olesya Severyukhina and
• Anatolie Sidorenko

Beilstein J. Nanotechnol. 2023, 14, 23–33, doi:10.3762/bjnano.14.3

• performance improvement can be solved with the help of spintronics devices, which are currently presented in a fairly wide variety of valuable effects: spin valves and valves in thin films and heterostructures [19][20], sensors based on the anomalous Hall effect [21], spin injection and magnetism detection

In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures

• Olena M. Kapran,
• Roman Morari,
• Taras Golod,
• Evgenii A. Borodianskyi,
• Vladimir Boian,
• Andrei Prepelita,
• Nikolay Klenov,
• Anatoli S. Sidorenko and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 913–923, doi:10.3762/bjnano.12.68

• states in complex thin-film multilayers. In this work, we study experimentally in-plane transport properties of microstructured Nb/Co multilayers. We apply various transport characterization techniques, including magnetoresistance, Hall effect, and the first-order-reversal-curves (FORC) analysis. We

• (FORC) analysis. We demonstrate that in combination with magnetoresistance (MR) and Hall effect measurements, it can provide a detailed knowledge of the magnetic configuration in the ML. In particular, we identify the parallel (P) state, the antiparallel (AP) state, the noncollinear monodomain scissor

• state, and polydomain states. We observe that the domain state is manifested by a profound enhancement of resistance. Analysis of the Hall effect reveals that those maxima are associated with the flux-flow phenomenon, caused by motion of Abrikosov vortices induced by domain stray fields. From a device

Nonadiabatic superconductivity in a Li-intercalated hexagonal boron nitride bilayer

• Kamila A. Szewczyk,
• Izabela A. Domagalska,
• Artur P. Durajski and
• Radosław Szczęśniak

Beilstein J. Nanotechnol. 2020, 11, 1178–1189, doi:10.3762/bjnano.11.102

• nontoxic. It is worth noting that graphene on a hBN substrate was used to fabricate transistor devices with high mobility [35], with the help of which the quantum Hall effect was observed. A heterojunction with two graphene layers [30] and superlattice structures [36][37][38] were also constructed. The

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• carrier concentration in the ITO film is responsible for the blue shift and this can be clearly explained by the Burstein–Moss shift model [9][38]. Electrical properties of IAAI and ITO films obtained from four-point probe and Hall effect measurements are given in Table 2. Sheet resistance and resistivity

• determined at room temperature with a four-point probe taking into account the measured film thickness and a supply current of 4 mA. The results obtained are the average of repeated measurements. Hall effect measurements analyses Further studies on electrical properties in terms of carrier mobility and

• carrier concentration were carried out using a Hall effect measurement system. During this experiment, the maximum voltage and current were set at 20 V and 20 mA, respectively, using the van der Pauw method by employing a four-point probe situated around the sample perimeter. All samples underwent ohmic

Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field

• Levente Máthé and
• Ioan Grosu

Beilstein J. Nanotechnol. 2020, 11, 225–239, doi:10.3762/bjnano.11.17

• points the energy dispersion of quasiparticles in graphene is linear in momentum. This linear band structure is called a Dirac cone, and it is at the basis of many interesting physical phenomena such as the ’chiral’ quantum Hall effect [51], the Klein tunneling effect [50] and the Aharonov–Bohm effect

Integration of sharp silicon nitride tips into high-speed SU8 cantilevers in a batch fabrication process

• Nahid Hosseini,
• Matthias Neuenschwander,
• Oliver Peric,
• Santiago H. Andany,
• Jonathan D. Adams and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2019, 10, 2357–2363, doi:10.3762/bjnano.10.226

• fabrication yield and an easy bottom-up recipe. Genolet et al. have shown AFM images of DNA-plasmid molecules using SU8 cantilevers [21]. SU8-based Hall effect sensor cantilevers have also been presented by Mouaziz and co-workers [22]. In addition, SU8 cantilevers have shown a performance of high-speed

Nitrogen-vacancy centers in diamond for nanoscale magnetic resonance imaging applications

• Alberto Boretti,
• Lorenzo Rosa,
• Jonathan Blackledge and
• Stefania Castelletto

Beilstein J. Nanotechnol. 2019, 10, 2128–2151, doi:10.3762/bjnano.10.207

• allows imaging of metal spins via the Hall effect [55]. NV center wide-field microscopy was applied in [11] to characterize and image magnetic samples; sample thin ferromagnetic films were used to map and image their sub-micrometer stray magnetic field patterns by using an array of NV center spins. Using

Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi₂Te₃ matrix

• Srashti Gupta,
• Dinesh Chandra Agarwal,
• Bathula Sivaiah,
• Sankarakumar Amrithpandian,
• Kandasami Asokan,
• Ajay Dhar,
• Binaya Kumar Panigrahi,
• Devesh Kumar Avasthi and
• Vinay Gupta

Beilstein J. Nanotechnol. 2019, 10, 634–643, doi:10.3762/bjnano.10.63

• conduction transition. In order to gain further knowledge about phase transitions and carrier types, further studies such as synchrotron powder X-ray diffraction, heat capacity, Raman spectroscopy, Hall effect and or positron annihilation spectroscopy measurements would be required, which can be the part of

Investigation of CVD graphene as-grown on Cu foil using simultaneous scanning tunneling/atomic force microscopy

• Majid Fazeli Jadidi,
• Umut Kamber,
• Oğuzhan Gürlü and
• H. Özgür Özer

Beilstein J. Nanotechnol. 2018, 9, 2953–2959, doi:10.3762/bjnano.9.274

• nanoelectronics, as it provides unprecedented mobility of charge carriers at room temperature [1]. Moreover, very high conductivity at room temperature and a half-integer quantum Hall effect suggest the presence of relativistic charge carriers with vanishing mass [2]. Graphene has been investigated by using

Contactless photomagnetoelectric investigations of 2D semiconductors

• Marian Nowak,
• Marcin Jesionek,
• Barbara Solecka,
• Piotr Szperlich,
• Piotr Duka and
• Anna Starczewska

Beilstein J. Nanotechnol. 2018, 9, 2741–2749, doi:10.3762/bjnano.9.256

• values as determined by different methods of investigations can be drastically different. For instance, far-infrared magneto-transmission (FIR-MT) measurements show that graphene layers with very high carrier mobility can be observed in graphene films with low Hall effect mobility [45]. Further

Silicene, germanene and other group IV 2D materials

• Patrick Vogt

Beilstein J. Nanotechnol. 2018, 9, 2665–2667, doi:10.3762/bjnano.9.248

• atomic size of the involved elements. This opens the way to observe a quantum spin Hall effect, for example, in germanene or stanene in an accessible temperature range, possibly even at room temperature. The occurrence of topologically nontrivial properties will be more robust for the heavier

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• an anomalous Hall effect above room temperature, confirming the presence of spin-polarized carriers. Electron microscopy, atomic and magnetic force microscopy results suggest that the films under study have a homogenous columnar structure in the bulk while MnSb inclusions accumulate near the surface

• . This is in good agreement with the high mobility values of charge carriers. Based on our data we conclude that the magnetic and magnetotransport properties of the films at room temperature are defined by the MnSb inclusions. Keywords: anomalous Hall effect; high-temperature ferromagnetism

• in Table 1 and the parameters obtained from the Rxy(H) curves is related to a substantial magnetic anisotropy of the samples under study (see Figure 1). The observation of the anomalous Hall effect (AHE) clearly suggests that delocalized holes interact with the magnetic subsystem, i.e., that there

Influence of the thickness of an antiferromagnetic IrMn layer on the static and dynamic magnetization of weakly coupled CoFeB/IrMn/CoFeB trilayers

• Deepika Jhajhria,
• Dinesh K. Pandya and
• Sujeet Chaudhary

Beilstein J. Nanotechnol. 2018, 9, 2198–2208, doi:10.3762/bjnano.9.206

• magnetoresistance [7], inverse spin Hall effect [8] and spin Seebeck effect [9][10] have already been reported in AF materials. Transfer of spin angular momentum presents one of the promising ways to control the magnetic properties of FM thin films [11]. However, little is known about spin transport in AF materials

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• excess of 1 × 1019 cm−3 with minimal impact on surface quality. Hall effect data proved that reducing SOI dimensions from 66 to 13 nm lead to an increase in carrier concentration values due to the reduced volume available to the dopant for diffusion. Dopant trapping was found at both Si–SiO2 interfaces

• quality remains relatively smooth. These values are important for both further analysis and industrial applications of MLD on SOI. The carrier-concentration analysis techniques ECV and Hall effect measurement both require high-quality surfaces and substrates to provide accurate data. Furthermore, from an

• to draw holes to the surface and enable the dissolution of the semiconductor into the electrolyte. Applying this voltage near the insulator layer becomes problematic and prevents etching and analysis in this region. Hall effect measurements were instead used, which required careful handling during

A variable probe pitch micro-Hall effect method

• Maria-Louise Witthøft,
• Frederik W. Østerberg,
• Janusz Bogdanowicz,
• Rong Lin,
• Henrik H. Henrichsen,
• Ole Hansen and
• Dirch H. Petersen

Beilstein J. Nanotechnol. 2018, 9, 2032–2039, doi:10.3762/bjnano.9.192

• , Kapeldreef 75, B-3001 Leuven, Belgium 10.3762/bjnano.9.192 Abstract Hall effect metrology is important for a detailed characterization of the electronic properties of new materials for nanoscale electronics. The micro-Hall effect (MHE) method, based on micro four-point probes, enables a fast

• ; in that case, the better method depends on the experimental conditions, i.e., the distance between the insulating boundary and the electrodes. Improvement to the accuracy of Hall Effect measurement results is crucial for nanoscale metrology, since surface scattering often leads to low carrier

• mobility. Keywords: four-point probes; Hall effect; metrology; mobility; variable Probe Pitch; Introduction Materials characterization becomes increasingly difficult as the dimensions of transistors continue to decrease. Although three dimensional electrical characterization is the ultimate goal of

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• Grenoble, France 10.3762/bjnano.9.184 Abstract In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometre resolution. In the case of SiGe, which constitutes the

• mobility; contact resistance; differential Hall effect; dopant activation; fully depleted silicon on insulator (FDSOI); laser annealing; sub-nanometre resolution; Introduction The research efforts made throughout the last decades have made it possible to keep the momentum for a continuous miniaturization

• , differential Hall effect (DHE) profiling [17][18] can potentially meet all the requirements related to the precise measurement of dopant activation at the semiconductor surface. DHE relies on the iteration of etching process and conventional Hall effect measurements. The active carrier profile is therefore

A zero-dimensional topologically nontrivial state in a superconducting quantum dot

• Pasquale Marra,
• Alessandro Braggio and
• Roberta Citro

Beilstein J. Nanotechnol. 2018, 9, 1705–1714, doi:10.3762/bjnano.9.162

• temperatures. Keywords: Josephson effect; Josephson junctions; quantum dots; superconducting quantum dots; topological states; topological superconductors; Introduction Since the discovery of the quantum Hall effect [1][2] and the theoretical prediction of Majorana bound states in triplet superconductors [3

Robust midgap states in band-inverted junctions under electric and magnetic fields

• Álvaro Díaz-Fernández,
• Natalia del Valle and
• Francisco Domínguez-Adame

Beilstein J. Nanotechnol. 2018, 9, 1405–1413, doi:10.3762/bjnano.9.133

• connection between the quantum Hall effect and a topological invariant, the so-called first Chern number [2]. The fact that a quantum Hall system was insulating in the bulk but had a quantized conductivity on the edge could be related to the non-trivial topology of the band structure. In 2006, topology came

• spin Hall effect [5]. However, no clear signatures of conductance quantization have been observed yet [6][7]. Besides II–VI compound semiconductors, such as HgTe, IV–VI semiconductors support non-trivial edges states as well [8]. In this regard, Dziawa et al. reported evidence of topological

Circular dichroism of chiral Majorana states

• Javier Osca and
• Llorenç Serra

Beilstein J. Nanotechnol. 2018, 9, 1194–1199, doi:10.3762/bjnano.9.110

• quasiparticles, a class of hybrid systems where Majorana states appear around 2D vortex cores in the bulk and on the external edges of the sample [16]. Another class of 2D materials with propagating Majorana modes are the topological insulators based on the quantum-anomalous Hall effect. We refer, specifically

• topological phases with one and two chiral Majorana states, respectively. It is remarkable that the intrinsic magnetization of the material in the anomalous Hall effect allows for the tuning of the phase transitions using much weaker magnetic fields than with the standard Hall effect. In this work we discuss

Non-equilibrium electron transport induced by terahertz radiation in the topological and trivial phases of Hg_1−xCd_xTe

• Alexandra V. Galeeva,
• Alexey I. Artamkin,
• Alexey S. Kazakov,
• Sergey N. Danilov,
• Sergey A. Dvoretskiy,
• Nikolay N. Mikhailov,
• Ludmila I. Ryabova and
• Dmitry R. Khokhlov

Beilstein J. Nanotechnol. 2018, 9, 1035–1039, doi:10.3762/bjnano.9.96

• and 2D topological Dirac states coexisting in a smooth topological heterojunction. Keywords: terahertz radiation; topological insulator; photoconductivity; Findings Discovery of theoretically predicted quantum spin Hall effect states in HgTe quantum wells [1][2] has initiated extensive studies of

• inverted band structure (topological phase). Hall effect measurements have shown that all the samples are of the n-type. Free electron concentration values determined in magnetic field of 0.05 T at T = 4.2 K are in the range from 3.7 × 1014 cm−3 to 5.2 × 1014 cm−3. Within the two-band Kane model, the given

Valley-selective directional emission from a transition-metal dichalcogenide monolayer mediated by a plasmonic nanoantenna

• Haitao Chen,
• Mingkai Liu,
• Lei Xu and
• Dragomir N. Neshev

Beilstein J. Nanotechnol. 2018, 9, 780–788, doi:10.3762/bjnano.9.71

• polarization [15], valley Hall effect [16], and valley-dependent photogalvanic effect have been explored. Excitonic valley coherence [17], valley- and spin-polarized Landau levels [18] and valley Zeeman effect [19][20][21][22] have also been studied in monolayer TMDCs. Different schemes to control the valley

Sensing behavior of flower-shaped MoS₂ nanoflakes: case study with methanol and xylene

• Maryam Barzegar,
• Masoud Berahman and
• Azam Iraji zad

Beilstein J. Nanotechnol. 2018, 9, 608–615, doi:10.3762/bjnano.9.57

• , a larger variation in sample resistance at higher temperatures can be expected. To study the reason behind this repeatable behavior toward both gases, we consider the flower-shaped MoS2 as an n-type semiconductor due to its bulk shape, which was also confirmed using Hall effect experiments. Four Ti

• (10 nm)/Au (200 nm) films as electrodes in van der Pauw configuration were deposited on spin-coated MoS2/SiO2 (300 nm)/Si samples for Hall effect measurements. The details of the configuration are given in [42]. The results show an n-type characteristic for the samples with an electron density and a

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• keeping the Mg effusion cell at 240 °C. A nominal free hole concentration of 3 × 1017 cm−3 was estimated by Hall effect measurements performed in a GaAs epilayer, grown on a non Au-coated substrate, simultaneously with the nanowire samples. Despite the different factors that can influence the measured

• covering one order of magnitude, p = 2.7 × 1016, 3.8 × 1016 and 1.4 × 1017 cm−3, and the mobilities are μ = 0.33, 18.4 and 38.8 cm2/Vs, for the nanowires #1, #2 and #3, respectively. The free hole concentration values (Table 1) are lower than the nominal Mg concentrations obtained by Hall effect

Coexistence of strongly buckled germanene phases on Al(111)

• Weimin Wang and
• Roger I. G. Uhrberg

Beilstein J. Nanotechnol. 2017, 8, 1946–1951, doi:10.3762/bjnano.8.195

• spin-splitting, quantum spin Hall effect, amongst others. Based on the wealth of physical phenomena exhibited by various 2D materials, they are considered as important future materials of high potential for applications in nano-scale electronics and spintronics. A sub-group of 2D materials is graphene

• quantum spin Hall effect is stronger than in graphene [3][4][5][6]. The formation of 2D sheets of group IV elements is a great experimental challenge. In this paper we address the germanene case by characterizing a layer of Ge formed on Al(111). Experimental efforts have been made to grow germanene on